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Other articles related with "single-event transient"：
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98503 |
Xiaoyu Pan(潘霄宇), Hongxia Guo(郭红霞), Yahui Feng(冯亚辉), Yinong Liu(刘以农), Jinxin Zhang(张晋新), Jun Fu(付军), and Guofang Yu(喻国芳) |
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Temperature dependence of single-event transients in SiGe heterojunction bipolar transistors for cryogenic applications |
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Chin. Phys. B
2023 Vol.32 (9): 98503-098503
[Abstract]
(130)
[HTML 1 KB]
[PDF 6512 KB]
(81)
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76106 |
Jia-Nan Wei(魏佳男), Chao-Hui He(贺朝会), Pei Li(李培), Yong-Hong Li(李永宏), Hong-Xia Guo(郭红霞) |
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Impact of proton-induced alteration of carrier lifetime on single-event transient in SiGe heterojunction bipolar transistor |
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Chin. Phys. B
2019 Vol.28 (7): 76106-076106
[Abstract]
(605)
[HTML 1 KB]
[PDF 1215 KB]
(197)
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98505 |
Wei-Wei Yan(闫薇薇), Lin-Chun Gao(高林春), Xiao-Jing Li(李晓静), Fa-Zhan Zhao(赵发展), Chuan-Bin Zeng(曾传滨), Jia-Jun Luo(罗家俊), Zheng-Sheng Han(韩郑生) |
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Experimental and simulation studies of single-event transient in partially depleted SOI MOSFET |
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Chin. Phys. B
2017 Vol.26 (9): 98505-098505
[Abstract]
(574)
[HTML 0 KB]
[PDF 2992 KB]
(250)
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16102 |
Chen Jian-Jun (陈建军), Chi Ya-Qing (池雅庆), Liang Bin (梁斌) |
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Mechanism of single-event transient pulse quenching between dummy gate isolated logic nodes |
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Chin. Phys. B
2015 Vol.24 (1): 16102-016102
[Abstract]
(571)
[HTML 0 KB]
[PDF 869 KB]
(376)
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